Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 –10 Torr). The most important aspect of MBE is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially. These deposition rates require proportionally better vacuum to achieve the same impurity levels as other deposition techniques. The absence of carrier gases, …
Molecular Beam Epitaxy - an overview ScienceDirect Topics
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Molecular Beam Epitaxy - an overview ScienceDirect Topics
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